International Rectifier IRFU3911
SMPS MOSFET
APPLICATIONS
High frequency DC-DC converters HEXFET Power MOSFET l IRFR3911 IRFU3911 ® ID 14A VDSS 100V RDS(on) max 0.115Ω Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3911 I-Pak IRFU3911ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 14 9.5 56 56 0.37 ± 20 7.1 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. ––– ––– ––– Max. 2.7 50 110 Units °C/W Not...