International Rectifier IRFU430APBF
HEXFET Power MOSFET
| Part No. | IRFU430APBF |
|---|---|
| Datasheet | IRFU430APBF Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l Lead-Free l IRFR430APbF IRFU430APbF RDS(on) max 1.7Ω HEXFET® Power MOSFET VDSS 500V ID 5.0A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective COSS specified (See AN 1001) l D-Pak IRFR430A I-Pak IRFU430AABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 5.0 3.2 20 110 0.91 ± 30 3.0 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max.
