IRFU9310PBF Datasheet PDF | International Rectifier

International Rectifier IRFU9310PBF

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Part No.	IRFU9310PBF
Datasheet	IRFU9310PBF Download
Manufacturer	International Rectifier
Description	Power MOSFET
Buy	Stock & Price

DESCRIPTION

l l IRFR9310PbF IRFU9310PbF D HEXFET® Power MOSFET VDSS = -400V RDS(on) = 7.0Ω S G ID = -1.8A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak TO-252AA I-Pak TO-251AA

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -1.8 -1.1 -7.2 50 0.40 ± 20 92 -1.8 5.0 -24 -55 to + 150 300 (1.6mm from c...