International Rectifier IRFV260
TRANSISTOR N-CHANNEL
FEATURES
: n Hermetically Sealed n Electrically Isolated n Simple Drive Requirements n Ease of Paralleling n Ceramic Eyelets RDS(on) 0.060Ω ID 45A*ABSOLUTE MAXIMUM RATINGS
Parameter ID @ VGS = 10V, TC = 25°C Continuous Drain Current ID @ VGS = 10V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor IRFV260 45* 29 180 300 2.4 Units A W W/K VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage ±20 Single Pulse Avalanche Energy 700 Avalanche Current 45 Repetitive Avalanche Energy 30 Peak Diode Recovery dv/dt 4.3 Operating Junction -55 to 150 Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10 sec.) V mJ A mJ V/ns oC Weight 10.9 (typical) g * ID current limited by pin diameter IRFV260 DeviceELECTRICAL CHARACTERISTICS
@ Tj = 25°C (Unless Otherwise Specified) Parameter Min. BVDSS Drain-to-Source Breakdown Voltage 200 ∆BVDSS/∆TJ Temp. Coefficient of Breakdown Voltage — RDS(on) Stati...