International Rectifier IRFY044CM
POWER MOSFET N-CHANNE
| Part No. | IRFY044CM |
|---|---|
| Datasheet | IRFY044CM Download |
| Manufacturer |  International Rectifier |
| Description | POWER MOSFET N-CHANNE |
| Buy | Stock & Price |
FEATURES
n n n n n Hermetically sealed Electrically isolated Simple Drive Requirements Ease of Paralleling Ceramic eyeletsABSOLUTE MAXIMUM RATINGS
Parameter I D @ VGS=10V, TC = 25°C I D @ VGS=10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ Tstg IRFY044CM Units A W W/K V mJ A mJ V/ns °C g Continuous Drain Current 16* Continuous Drain Current 16* Pulsed Drain Current 156 Max. Power Dissipation 100 Linear Derating Factor 0.8 Gate-to-Source Voltage ±20 Single Pulse Avalance Energy 100 Avalance Current 16* Repetitive Avalanche Energy 10 Peak Diode Recovery dv/dt 4.5 Operating Junction -55 to 150 Storage Temperature Range Lead Temperature 300 (0.063 in (1.6mm) from case for 10 sec) Weight 4.3(typical) * ID current limited by pin diameter IRFY044CM DeviceELECTRICAL CHARACTERISTICS
@ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-S...
