International Rectifier IRFY130C
The efficient geometry design achieves very low on-state resistance combined with high transconductance. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.
| Part No. |
IRFY130C |
| Datasheet |
IRFY130C
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| Manufacturer |
 International Rectifier |
| Description |
Power MOSFET |
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FEATURES
: n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Ideally Suited for Space Level APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 14.4 9.1 57.6 75 0.6 ±20 69 14.4 7.5 5.5 -55 to 150 300(0.063in./1.6mm from case for 10 sec) 4.3 (Typical) Units A W W/°C V mJ A mJ V/ns o C g 1 4/18/01 Free Datasheet IRFY130C, IRFY130CM ELECTRICAL CHARACTERISTICS
@ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature...
