International Rectifier IRFY430CM
POWER MOSFET N-CHANNEL
| Part No. | IRFY430CM |
|---|---|
| Datasheet | IRFY430CM Download |
| Manufacturer |  International Rectifier |
| Description | POWER MOSFET N-CHANNEL |
| Buy | Stock & Price |
FEATURES
n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic EyeletsABSOLUTE MAXIMUM RATINGS
Parameter ID @ V GS=10V, TC = 25°C ID @ VGS=10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ Tstg Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalance Energy Avalance Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight IRFY430CM 4.5 2.8 18 75 0.6 ±20 280 4.5 7.5 3.5 -55 to 150 300 (0.063 in (1.6mm) from case for 10 sec) 4.3 (typical) Units A W W/K V mJ A mJ V/ns °C °C g IRFY430CM DeviceELECTRICAL CHARACTERISTICS
@ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/ ∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min.
