International Rectifier IRFY9240CM
P-CHANNEL POWER MOSFET
FEATURES
n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of ParallelingABSOLUTE MAXIMUM RATINGS
Parameter I D @ VGS= -10V, TC = 25°C I D @ VGS= -10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ Tstg IRFY9240CM Units A W W/K V mJ A mJ V/ns °C g Continuous Drain Current -9.4 Continuous Drain Current -6.0 Pulsed Drain Current -36 Max. Power Dissipation 100 Linear Derating Factor 0.8 Gate-to-Source Voltage ±20 Single Pulse Avalance Energy 700 Avalance Current -9.4 Repetitive Avalanche Energy 10 Peak Diode Recovery dv/dt -5.5 Operating Junction -55 to 150 Storage Temperature Range Lead Temperature 300 (0.063 in (1.6mm) from case for 10 sec) Weight 4.3(typical) * ID current limited by pin diameter IRFY9240CM DeviceELECTRICAL CHARACTERISTICS
@ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/ ∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistanc...