International Rectifier IRFZ10
HEXFET Power MOSFET
| Part No. | IRFZ10 |
|---|---|
| Datasheet | IRFZ10 Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
PD - 90440A IRFZ10 D G D S TO-220AB G D S Gate Drain Source 1 06/24/05 ww.DataSheet4U.com IRFZ10 2 IRFZ10 3 IRFZ10 4 IRFZ10 5 IRFZ10 6 IRFZ10 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations
● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer + + -
● dv/dt controlled by RG
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig -14 For N Channel HEXFETS 7 IRFZ10 TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 1...
● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer + + -
● dv/dt controlled by RG
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig -14 For N Channel HEXFETS 7 IRFZ10 TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 1...
