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IRFZ34NS Datasheet PDF

International Rectifier IRFZ34NS

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
  • Channels : 1
  • Max Operating Temp : 175°C
  • Min Operating Temp : -55°C
Source: Octopart
Part No. IRFZ34NS
Datasheet IRFZ34NS Download
Manufacturer
International Rectifier
Description Power MOSFET
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IRFZ34NS datasheet page 1 preview

DESCRIPTION

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ34NL) is available for lowprofile applications. D 2 Pak T O -2 6 2

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
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