International Rectifier IRFZ34VLPBF
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.- Max Operating Temp : 175°C
Source:
Octopart
| Part No. | IRFZ34VLPBF |
|---|---|
| Datasheet | IRFZ34VLPBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l Lead-FreeDESCRIPTION
l HEXFET Power MOSFET D IRFZ34VSPbF IRFZ34VLPbF ® VDSS = 60V RDS(on) = 28mΩ G S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. ID = 30A The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. The D2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ34VL) is available for lowprofile application. D2Pak IRFZ34VS TO-262 IRFZ34VLABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
