IRFZ44RPBF Datasheet PDF

International Rectifier IRFZ44RPBF

the IRFZ44 for Linear/Audio Applications l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.028Ω G S ID = 50*A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts.