IRFZ44VSPbF Datasheet PDF | International Rectifier

International Rectifier IRFZ44VSPbF

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.

Part No.	IRFZ44VSPbF
Datasheet	IRFZ44VSPbF Download
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
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APPLICATIONS

Lead-Free IRFZ44VSPbF IRFZ44VLPbF D HEXFET® Power MOSFET VDSS = 60V RDS(on) = 16.5mΩ G S ID = 55A

DESCRIPTION

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D2Pak IRFZ44VS TO-262 IRFZ44VL The through-hole version (IRFZ44VL) is available for low-profile applications.

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current...