FEATURES
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free DESCRIPTION
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF IRFZ44ZLPbF HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 13.9mΩ S ID = 51A TO-220AB IRFZ44ZPbF D2Pak TO-262 IRFZ44ZSPbF IRFZ44ZLPbF ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) cPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS EAS EAS (tested) IAR EAR Gate-to-Source Voltage dSingle Pulse Avalanche Energy (Thermally Limited) iSingle Pulse Avalanche Energy Tested Value cAvalanche Current hRepetitive Avalanche Energy TJ TSTG Operating Junction and Stor...
International Rectifier
