FEATURES
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free DESCRIPTION
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. ABSOLUTE MAXIMUM RATINGS
IRFZ46ZLPbF HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 13.6mΩ S ID = 51A TO-220AB IRFZ46ZPbF D2Pak TO-262 IRFZ46ZSPbF IRFZ46ZLPbF Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) cPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS EAS EAS (tested) IAR EAR Gate-to-Source Voltage dSingle Pulse Avalanche Energy (Thermally Limited) iSingle Pulse Avalanche Energy Tested Value cAvalanche Current hRepetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Max.
International Rectifier
