IRFZ48NSPBF Datasheet PDF | International Rectifier

International Rectifier IRFZ48NSPBF

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.

Part No.	IRFZ48NSPBF
Datasheet	IRFZ48NSPBF Download
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
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DESCRIPTION

Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G IRFZ48NSPbF IRFZ48NLPbF D PD - 95125 HEXFET® Power MOSFET VDSS = 55V RDS(on) = 0.014Ω ID = 64A S Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ48NL) is available for lowprofile applications. D 2 Pak TO-262

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current,...