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IRFZ48RS Datasheet PDF

International Rectifier IRFZ48RS

the IRFZ48 for Linear/Audio Applications D RDS(on) = 0.018Ω G S ID = 50*A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D 2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
Part No. IRFZ48RS
Datasheet IRFZ48RS Download
Manufacturer
International Rectifier
Description HEXFET Power MOSFET
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IRFZ48RS datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 50* 50* 290 190 1.3 ± 20 100 4.5 -55 to + 175 300 (1.6mm from case ) 10 lbf●in (1.1N●m) Units A W W/°C V mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.8 ––– 62 Units °C/W 1 05/21/02 IRFZ48RS/IRFZ48RL

ELECTRICAL CHARACTERISTICS

@ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Co...
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