International Rectifier IRG4BC10KD
INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | IRG4BC10KD |
|---|---|
| Datasheet | IRG4BC10KD Download |
| Manufacturer |  International Rectifier |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V● Combines low conduction losses with high switching speed
● Tighter parameter distribution and higher efficiency than previous generations
● IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.39V @VGE = 15V, IC = 5.0A n-ch an nel Benefits
● Latest generation 4 IGBTs offer highest power density motor controls possible
● HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses TO-220AB
ABSOLUTE MAXIMUM RATINGS
Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Cur...
