International Rectifier IRG4BC10SD-L
INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | IRG4BC10SD-L |
|---|---|
| Datasheet | IRG4BC10SD-L Download |
| Manufacturer |  International Rectifier |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Extremely low voltage drop 1.1Vtyp. @ 2A● S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
● Very Tight Vce(on) distribution
● IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
● Industry standard D2Pak & TO-262 packages C IRG4BC10SD-S IRG4BC10SD-L Standard Speed CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A n-ch an nel Benefits
● Generation 4 IGBT's offer highest efficiencies available
● IGBT's optimized for specific application conditions
● HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
● Lower losses than MOSFET's conduction and Diode losses D2Pak IRG4BC10SD-S Max. 600 14 8.0 18 18 4.0 18 ± 20 38 15 -55 to +150 TO-262 IRG4BC10SD-L Units V
ABSOLUTE MAXIMUM RATINGS
Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE P...
