International Rectifier IRG4MC40U
INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | IRG4MC40U |
|---|---|
| Datasheet | IRG4MC40U Download |
| Manufacturer |  International Rectifier |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
FEATURES
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● Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 8kHz - 40kHz, > 200kHz in Resonent Mode
● High Operating Frequency
● Switching-loss Rating includes all "tail" Losses
● Ceramic Eyelets C UltraFast Speed IGBT VCES = 600V G E VCE(on) max = 2.1V @VGE = 15V, IC = 20A n-channel Benefits
● Generation 4 IGBT's offer highest efficiency available
● IGBT's optimized for specified application conditions
● Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-254AA
ABSOLUTE MAXIMUM RATINGS
Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C...
