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IRG4PF50WD - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Optimized for use in Welding and Switch-Mode Power Supply.

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Datasheet preview – IRG4PF50WD

Datasheet Details

Part number IRG4PF50WD
Manufacturer IRF
File Size 253.08 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4PF50WD Datasheet
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Full PDF Text Transcription

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PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C VCES = 900V G E VCE(on) typ. = 2.
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