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IRGP20B60PD - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current.

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Datasheet Details

Part number IRGP20B60PD
Manufacturer IRF
File Size 739.45 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRGP20B60PD Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 94626 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C IRGP20B60PD VCES = 600V VCE(on) typ. = 2.05V @ VGE = 15V IC = 13.0A Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies G E Features • • • • • • • NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability n-channel Equivalent MOSFET Parameters  RCE(on) typ.