• Part: IRGP30B120KD-E
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: IRF
  • Size: 132.39 KB
Download IRGP30B120KD-E Datasheet PDF
IRF
IRGP30B120KD-E
IRGP30B120KD-E is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
Features - Low VCE(on) Non Punch Through (NPT) Technology - Low Diode VF (1.76V Typical @ 25A & 25°C) - 10 µs Short Circuit Capability - Square RBSOA - Ultrasoft Diode Recovery Characteristics - Positive VCE(on) Temperature Coefficient - Extended Lead TO-247AD Package Motor Control Co-Pack IGBT VCES = 1200V VCE(on) typ. = 2.28V VGE = 15V, IC = 25A, 25°C N-channel Benefits - Benchmark Efficiency for Motor Control Applications - Rugged Transient Performance - Low EMI - Significantly Less Snubber Required - Excellent Current Sharing in Parallel Operation - Longer leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.1) Continuous Collector Current (Fig.1) Pulsed Collector Current (Fig.3, Fig. CT.5) Clamped Inductive Load Current(Fig.4, Fig. CT.2) Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (Fig.2) Maximum Power Dissipation (Fig.2) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw. Max. 1200 60 30 120 120 30 120 ± 20 300 120 -55 to + 150 300, (0.063 in. (1.6mm) from case) 10 lbf- in (1.1N- m) Units °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt ZθJC Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Transient Thermal Impedance Junction-to-Case Min. - - - - - -...