IRGP30B120KD-E - INSULATED GATE BIPOLAR TRANSISTOR

IRF

Key Features

Low VCE(on) Non Punch Through (NPT) Technology.
Low Diode VF (1.76V Typical @ 25A & 25°C).
10 µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Recovery Characteristics.
Positive VCE(on) Temperature Coefficient.
Extended Lead TO-247AD Package C Motor Control Co-Pack IGBT VCES = 1200V G E VCE(on) typ. = 2.28V VGE = 15V, IC = 25A, 25°C N-channel Benefits.
Benchmark Efficiency for Motor Control.

IRGP30B120KD-E insulated gate bipolar transistor by IRF - Datasheet Preview

Datasheet Details

Part number	IRGP30B120KD-E
Manufacturer	IRF
File Size	132.39 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP30B120KD-E Datasheet

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Full PDF Text Transcription (Reference)

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PD- 93818 IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE(on) Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability • Square RBSOA • Ultrasoft Diode Recovery Characteristics • Positive VCE(on) Temperature Coefficient • Extended Lead TO-247AD Package C Motor Control Co-Pack IGBT VCES = 1200V G E VCE(on) typ. = 2.