FEATURES
l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRGP4055DPbF KEY PARAMETERS
300 1.70 270 150 V V A °C VCE min VCE(ON) typ. @ 110A IRP max @ TC= 25°C c TJ max C C G E C G E n-channel G Gate C Collector TO-247AC E Emitter DESCRIPTION
Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. ABSOLUTE MAXIMUM RATINGS
Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) Typ. ––– 1.45 0.20 ––– 2.0 (0.07) Max.
International Rectifier
