FEATURES
l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP APPLICATIONS
TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package PD - 97286 KEY PARAMETERS
VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C c TJ max C 330 1.69 250 150 C V V A °C G E G E C n-channel G G ate C C ollector TO-247AC E E m itter DESCRIPTION
Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. ABSOLUTE MAXIMUM RATINGS
Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temp...
International Rectifier
