IRGP420U - INSULATED GATE BIPOLAR TRANSISTOR

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IRGP420U INSULATED GATE BIPOLAR TRANSISTOR by IRF - Datasheet Preview — Datasheet preview – IRGP420U

Datasheet Details

Part number	IRGP420U
Manufacturer	IRF
File Size	258.44 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP420U Datasheet
Additional preview pages of the IRGP420U datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for high operating frequency (over 5kHz) C UltraFast IGBT VCES = 500V G E See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 3.0V @VGE = 15V, I C = 7.5A n-channel.

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Published: Aug 23, 2005 |