IRGP430U - INSULATED GATE BIPOLAR TRANSISTOR

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IRGP430U INSULATED GATE BIPOLAR TRANSISTOR by IRF - Datasheet Preview — Datasheet preview – IRGP430U

Datasheet Details

Part number	IRGP430U
Manufacturer	IRF
File Size	256.41 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP430U Datasheet
Additional preview pages of the IRGP430U datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 15A n-channel.

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Published: Aug 23, 2005 |