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IRGP450UD2 Datasheet Insulated Gate Bipolar Transistor

Manufacturer: IRF

Overview: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.

Datasheet Details

Part number IRGP450UD2
Manufacturer IRF
File Size 85.25 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGP450UD2_IRF.pdf

General Description

Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line.

They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.

TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.

Key Features

  • Switching-loss rating includes all "tail" losses TM.

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