International Rectifier IRGS6B60KD
INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | IRGS6B60KD |
|---|---|
| Datasheet | IRGS6B60KD Download |
| Manufacturer |  International Rectifier |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Low VCE (on) Non Punch Through IGBT Technology.● Low Diode VF.
● 10µs Short Circuit Capability.
● Square RBSOA.
● Ultrasoft Diode Reverse Recovery Characteristics.
● Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits
● Benchmark Efficiency for Motor Control.
● Rugged Transient Performance.
● Low EMI.
● Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB6B60KD D2Pak IRGS6B60KD Max. 600 13 7.0 26 26 13 7.0 26 ± 20 90 36 -55 to +150 TO-262 IRGSL6B60KD Units V
ABSOLUTE MAXIMUM RATINGS
Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
