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IRHM7130 Datasheet PDF

International Rectifier IRHM7130

This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
Part No. IRHM7130
Datasheet IRHM7130 Download
Manufacturer
International Rectifier
Description Power MOSFET
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IRHM7130 datasheet page 1 preview

FEATURES

: ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 14 9.0 56 75 0.60 ±20 160 14 7.5 5.5 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 ( 0.063 in.(1.6mm) from case for 10s) 9.3(Typical ) g 1 7/5/01 IRHM7130 Pre-Irradiation @ Tj = 25°C (Unless Otherwise Specified) Min 100 — — — 2.0 3.3 — — — — — — — — — — — — Electrical Character...
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