IRHM7130 Datasheet | IRF

Features : ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 14 9.0 56 75 0.60 ±20 160 14 7.5 5.5 -55 to 150 Pre-Irradiation Units A W/°C V m J A m J V/ns o 300 ( 0.063 in.(1.6mm) from case for 10s) 9.3(Typical ) g .irf. 7/5/01 Pre-Irradiation @ Tj = 25°C (Unless Otherwise Specified) Min 100 — — — 2.0 3.3 — — — — — — — — — — — — Electrical Characteristics Parameter Typ Max Units — 0.12 — — — — — — — — — — — — — — — 6.8 — — 0.18 0.20 4.0 — 25 250 100 -100 45 11 17 30 120 49 64 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0m A Reference to 25°C, ID = 1.0m A VGS = 12V, ID =9.0A ➃ VGS = 12V, ID = 14A VDS = VGS, ID = 1.0m A VDS > 15V, IDS = 9.0A ➃ VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =14A VDS = 50V VDD = 50V, ID =14A VGS =12V, RG = 7.5Ω BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance n A n C ns n H...