| Part number | IRHM7150 |
|---|---|
| Datasheet | IRHM7150_IRF.pdf |
| File Size | 444.14 KB |
| Manufacturer | IRF |
| Description | Power MOSFET |
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This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The bination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
IRHM7150 | RADIATION HARDENED POWER MOSFET THRU-HOLE | International Rectifier |
| Part Number | Description |
|---|---|
| IRHM7130 | Power MOSFET |
| IRHM7064 | N-Channel Transistor |
| IRHM7250 | Power MOSFET |
| IRHM7260 | Power MOSFET |
| IRHM7264SE | N-Channel Transistor |
| IRHM7450 | Power MOSFET |
| IRHM7450SE | N-Channel Transistor |
| IRHM7C50SE | N-Channel Transistor |
| IRHM7Z60 | Radiation Hardened Power MOSFET |
| IRHM2C50SE | N-Channel Transistor |
