IRHM7250
IRHM7250 is Power MOSFET manufactured by IRF.
Features
: n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 26 16 104 150 1.2 ±20 500 26 15 5.0 -55 to 150
Pre-Irradiation
Units A
W/°C
V m J A m J V/ns o
300 (0.063 in. (1.6mm) from case for 10s) 9.3 (Typical) g
.irf.
10/11/00
IRHM7250, JANSR2N7269
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
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- 2.0 8.0
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Typ Max Units
- 0.27
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