IRHM9150
Features
: n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -22 -14 -88 150 1.2 ±20 500 -22 15 -23 -55 to 150
Pre-Irradiation
Units A
W/°C
V m J A m J V/ns o
C g
300 ( 0.063 in. (1.6mm) from case for 10s) 9.3 (typical)
.irf.
2/18/03
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise...
