Datasheet Details
| Part number | IRHM9250 |
|---|---|
| Manufacturer | IRF |
| File Size | 133.12 KB |
| Description | RADIATION HARDENED POWER MOSFET |
| Download | IRHM9250 Download (PDF) |
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Overview: PD - 91299D RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY ™ ® RDS(on) I D QPL Part Number 0.315Ω -14A JANSR2N7423 0.315Ω -14A JANSF2N7423 International Rectifier’s RAD-Hard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
| Part number | IRHM9250 |
|---|---|
| Manufacturer | IRF |
| File Size | 133.12 KB |
| Description | RADIATION HARDENED POWER MOSFET |
| Download | IRHM9250 Download (PDF) |
|
|
|
Compare IRHM9250 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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