Datasheet Details
| Part number | IRHM9260 |
|---|---|
| Manufacturer | IRF |
| File Size | 123.63 KB |
| Description | RADIATION HARDENED POWER MOSFET |
| Download | IRHM9260 Download (PDF) |
|
|
|
Overview: PD - 93858 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM9260 100K Rads (Si) IRHM93260 300K Rads (Si) RDS(on) 0.160Ω 0.160Ω IRHM9260 JANSR2N7426 200V, P-CHANNEL REF: MIL-PRF-19500/660 RAD-Hard ™ HEXFET TECHNOLOGY ® I D QPL Part Number -27A JANSR2N7426 -27A JANSF2N7426 TO-254AA International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
| Part number | IRHM9260 |
|---|---|
| Manufacturer | IRF |
| File Size | 123.63 KB |
| Description | RADIATION HARDENED POWER MOSFET |
| Download | IRHM9260 Download (PDF) |
|
|
|
Compare IRHM9260 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Part Number | Description |
|---|---|
| IRHM9230 | P-Channel Transistor |
| IRHM9250 | RADIATION HARDENED POWER MOSFET |
| IRHM9064 | P-Channel Transistor |
| IRHM9150 | Radiation Hardened Power MOSFET |
| IRHM9160 | POWER MOSFET |
| IRHM2C50SE | N-Channel Transistor |
| IRHM53260 | (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHM54260 | (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHM57260 | Power MOSFET |
| IRHM57260SE | Power MOSFET |