Overview: PD - 94283B RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si) 0.05Ω ID -45A* -45A* IRHMS597160 100V, P-CHANNEL 5 TECHNOLOGY Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
