IRHMS597260
Description
IR Hi Rel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (Me V/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. .
Features
- Low RDS(on)
- Fast Switching
- Single Event Effect (SEE) Hardened
- Low Total Gate Charge
- Simple Drive Requirements
- Hermetically Sealed
- Ceramic Eyelets
- Electrically Isolated
- Light Weight
- ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM @ TC = 25°C
Pulsed Drain Current
PD...
