DESCRIPTION
: RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications. FEATURES
: n Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode n Ideal for Synchronous Rectifiers in DC-DC n n n n Converters up to 75A Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier Refer to IRHSNA57064 for Lower RDS(on) ABSOLUTE MAXIMUM RATINGS
Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR IF (AV)@ TC = 25°C IF (AV)@ TC =100°C TJ, TSTG Continuous Drain or Source Current Continuous Drain or Source Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➃ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Schottky and Body Diode Avg.
International Rectifier
