International Rectifier IRL3102SPBF
POWER MOSFET
| Part No. | IRL3102SPBF |
|---|---|
| Datasheet | IRL3102SPBF Download |
| Manufacturer |  International Rectifier |
| Description | POWER MOSFET |
| Buy | Stock & Price |
PD- 95589 IRL3102SPbF HEXFET® Power MOSFET D VDSS = 20V RDS(on) = 0.013Ω G Lead-Free S ID = 61A 1 07/20/04 IRL3102SPbF Ω 2 IRL3102SPbF 3 IRL3102SPbF 4 IRL3102SPbF 5 IRL3102SPbF 6 IRL3102SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations
● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer + + -
● dv/dt controlled by RG
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS 7 IRL3102SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS AN IRF 530S WIT H...
● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer + + -
● dv/dt controlled by RG
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14 For N Channel HEXFETS 7 IRL3102SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS AN IRF 530S WIT H...
