DESCRIPTION
A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies. S The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. TO-220AB ABSOLUTE MAXIMUM RATINGS
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 54 34 220 2.0 70 0.56 ± 16 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W W/°C V °C Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient Typ. Max. 1.8 62 Units °C/W 06/22/04 IRL3103D2Pb...
International Rectifier
