International Rectifier IRL3303PBF
Power MOSFET
| Part No. | IRL3303PBF |
|---|---|
| Datasheet | IRL3303PBF Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
● Lead-Free PD - 94887 IRL3303PbF HEXFET Power MOSFET 1 12/11/03 IRL3303PbF 2 IRL3303PbF 3 IRL3303PbF 4 IRL3303PbF 5 IRL3303PbF 6 IRL3303PbF D.U.T + - RG Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations
● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer - - +
● dv/dt controlled by RG
● Driver same type as D.U.T.
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop VDD Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 7 IRL3303PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A- 15.24 (.600) 14.84 (.584) 6.47 (.255) 4 6.10 (.240) 1 23 1.15 (.045) MIN...
● Low Stray Inductance
● Ground Plane
● Low Leakage Inductance Current Transformer - - +
● dv/dt controlled by RG
● Driver same type as D.U.T.
● ISD controlled by Duty Factor "D"
● D.U.T. - Device Under Test + - VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop VDD Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 7 IRL3303PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A- 15.24 (.600) 14.84 (.584) 6.47 (.255) 4 6.10 (.240) 1 23 1.15 (.045) MIN...
