IRL540N Datasheet | IRF

Previous Datasheet Index Next Data Sheet - 9.1495 PRELIMINARY l l l l l l HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 100V RDS(on) = 0.044Ω ID = 30A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide...