DESCRIPTION
l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.04Ω G ID = 3.8A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application SOT-223 ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TA = ID @ TA = ID @ TA = IDM PD @TA = PD @TA = VGS EAS IAR EAR dv/dt TJ, TSTG 25°C 25°C 70°C 25°C 25°C Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max.
International Rectifier
