IRLMS5703 Datasheet PDF | International Rectifier

International Rectifier IRLMS5703

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23.

Part No.	IRLMS5703
Datasheet	IRLMS5703 Download
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Buy	Stock & Price

DESCRIPTION

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. T op V iew M icro 6

ABSOLUTE MAXIMUM RATINGS

Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @- 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -2.3 -1.9 -13 1.7 13 ± 20 5.0 -55 to + 150 Units A W mW/°C V V/ns °C Thermal Resistance Ratings Parameter Rθ JA Maximum Junction-to-Ambient Min. ––– Typ. ––– Max 75 Units °C/W 4/7/04 IRLMS5703

ELECTRICAL CHARACTERISTICS

@ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.