FEATURES
l l l l l l l HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D IRLR3105PbF IRLU3105PbF ® VDSS = 55V RDS(on) = 0.037Ω G S ID = 25A DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak IRLR3105 I-Pak IRLU3105 ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS EAS (teste...
International Rectifier
