International Rectifier JANSH2N7261
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
| Part No. | JANSH2N7261 |
|---|---|
| Datasheet | JANSH2N7261 Download |
| Manufacturer |  International Rectifier |
| Description | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
| Buy | Stock & Price |
FEATURES
: n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically SealedABSOLUTE MAXIMUM RATINGS
Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight 8.0 5.0 32 25 0.20 ±20 130 5.5 -55 to 150 Pre-Irradiation IRHF7130, IRHF8130 Units A W W/°C V mJ V/ns o C g 300 (0.063 in. (1.6mm) from case for 10s) 0.98 (typical) 1 10/14/98 IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices Pre-Ir...
