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JANSR2N7549T1 Datasheet Radiation Hardened Power MOSFET

Manufacturer: IRF

Overview: RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level IRHMS597260 100 kRads(Si) IRHMS593260 300 kRads(Si) RDS(on) 0.103 0.

Datasheet Details

Part number JANSR2N7549T1
Manufacturer IRF
File Size 2.23 MB
Description RADIATION HARDENED POWER MOSFET
Datasheet JANSR2N7549T1-IRF.pdf

General Description

IR HiRel R5 technology provides high performance power MOSFETs for space applications.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).

The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.

Key Features

  • Low RDS(on).
  • Fast Switching.
  • Single Event Effect (SEE) Hardened.
  • Low Total Gate Charge.
  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Ceramic Eyelets.
  • Electrically Isolated.
  • Light Weight.
  • ESD Rating: Class 3A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current  PD @TC = 25°C.

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