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JANTXV2N7228 - POWER MOSFET

Download the JANTXV2N7228 datasheet PDF. This datasheet also covers the JANTX2N7228 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ P.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (JANTX2N7228-IRF.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number JANTXV2N7228
Manufacturer IRF
File Size 468.20 KB
Description POWER MOSFET
Datasheet download datasheet JANTXV2N7228 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 90493F POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRFM450 IRFM450 JANTX2N7228 JANTXV2N7228 REF: MIL-PRF-19500/592 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.415 Ω ID 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.