International Rectifier RHN7150
TRANSISTOR N-CHANNEL
| Part No. | RHN7150 |
|---|---|
| Datasheet | RHN7150 Download |
| Manufacturer |  International Rectifier |
| Description | TRANSISTOR N-CHANNEL |
| Buy | Stock & Price |
FEATURES
: s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weightABSOLUTE MAXIMUM RATINGS
Parameter I D @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight 34 21 136 150 1.2 ±20 500 34 15 5.5 -55 to 150 Pre-Radiation IRHN7150, IRHN8150 Units A W W/K V mJ A mJ V/ns oC To Or...
