International Rectifier RIC7S113E4
The RIC7S113E4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.| Part No. | RIC7S113E4 |
|---|---|
| Datasheet | RIC7S113E4 Download |
| Manufacturer |  International Rectifier |
| Description | RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER |
| Buy | Stock & Price |
FEATURES
Product Summary n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V VOFFSET IO+/- 400V max. 2A / 2A n Tolerant to negative transient voltage n dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels VOUT ton/off (typ.) Delay Matching(typ.) 10 - 20V 120 & 100 ns 5 ns n Separate logic supply range from 5 to 20V Logic and power ground ±5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Outputs in phase with inputs n Hermetically Sealed n LightweightDESCRIPTION
Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts.
